TOKYO—(BUSINESS WIRE)—Dec. 19, 2005—
Elpida Memory, Inc. (Elpida), Japan's leading global
supplier of Dynamic Random Access Memory (DRAM), today announced the
shipment of 80 nm-based 2 Gigabit DDR2 SDRAM samples. These samples
are among the first 80 nm-based devices in the world to be shipped for
customer evaluation, and the devices are expected to be used first in
high-density memory modules for high performance servers.
"Inherent in the 80 nm production process technology is the fact
that devices using this process will be even smaller in size, although
their density is greater," said Jun Kitano, director of technical
marketing for Elpida Memory (USA) Inc. "Based on market demand, Elpida
intends to use the 80 nm process for its most advanced DRAM devices at
its newly expanded 300 mm wafer manufacturing facility (the E300 Fab)
in Hiroshima, Japan."
Features and Benefits of 2 Gigabit DDR2 SDRAM:
The 2 Gigabit DDR2 SDRAM devices are available in three different
data rate speeds: 533 Mega bits per second (Mbps), 667 Mbps, or 800
Mbps. They are organized as either 64 M words x 4 bits x 8 banks or as
32 M words x 8 bits x 8 banks. The supply voltage (VDD) is
1.8V+/-0.1V, and the operating temperature range (Tc) is 0-85 degrees
C. The devices are available in 68-ball FBGA packages for easy
mounting on Dual In-line Memory Modules (DIMMs).
Summary of Features
Products EDE2104AASE-8G-E (DDR2-800)
EDE2104AASE-6E-E (DDR2-667)
EDE2104AASE-5C-E (DDR2-533)
EDE2108AASE-8G-E (DDR2-800)
EDE2108AASE-6E-E (DDR2-667)
EDE2108AASE-5C-E (DDR2-533)
-------------------------------- -------------------------------------
Process 80 nm (ArF scanner adoption)
-------------------------------- -------------------------------------
Organization 64 M words x 4 bits x 8 banks
32 M words x 8 bits x 8 banks
-------------------------------- -------------------------------------
Supply voltage(VDD) 1.8V+/-0.1V
-------------------------------- -------------------------------------
Data Rate 800 Mbps, 667 Mbps, 533 Mbps
-------------------------------- -------------------------------------
Operating temperature range Tc = 0-85 degrees C
-------------------------------- -------------------------------------
Package 68-ball FBGA
-------------------------------- -------------------------------------
Elpida originally announced details on the development of 80
nm-based DDR2 SDRAM components on June 23, 2005
(http://www.elpida.com/en/news/2005/06-23a.html).
Availability
Elpida's 2 Gigabit DDR2 SDRAM devices are currently available to
customers as samples and volume production will begin in accordance
with market demand.
About Elpida Memory, Inc.
Elpida Memory, Inc. is a manufacturer of Dynamic Random Access
Memory (DRAM) silicon chips with headquarters based in Tokyo, Japan,
and sales and marketing operations located in Japan, North America,
Europe and Asia. Elpida's state-of-the-art semiconductor wafer
manufacturing facilities are located in Hiroshima, Japan. Elpida
offers a broad range of leading-edge DRAM products for high-end
servers, mobile phones, digital television sets and digital cameras as
well as personal computers. Elpida had sales of 207.0 billion Yen
during the fiscal year ending March 31, 2005. For more information,
visit www.elpida.com.
The information contained within this news release, is current as
of the date of release. Please note that the information herein may be
revised later without prior notice.
Contact:
Elpida Memory, Inc. (Japan)
Tomoko Kobayashi, +81-3-3281-1648 (Asia/Japan)
Email Contact
or
Elpida Memory (Europe) GmbH. (Germany)
Peter Westerdorf, 0049 (0)211 23945120 (Europe)
Email Contact
or
Lee Communications - PR for Elpida Memory (USA) Inc.
Heather Roberts, 408-288-8681 (North America)
Email Contact
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